Sanchez-Perez, ClaraKnapp, Caroline EColman, Ross HSotelo-Vazquez, CarlosSathasivam, SanjayanOilunkaniemi, RaijaLaitinen, Risto SCarmalt, Claire J2025-01-292025-01-292020Clara Sanchez-Perez, Caroline E. Knapp, Ross H. Colman, Carlos Sotelo-Vazquez, Sanjayan Sathasivam, Raija Oilunkaniemi, Risto S. Laitinen, and Claire J. Carmalt ACS Omega 2020 5 (26), 15799-15804 DOI: 10.1021/acsomega.0c00413https://hdl.handle.net/10115/67597Transition metal chalcogenide thin films of the type FexZrSe2 have applications in electronic devices, but their use is limited by current synthetic techniques. Here, we demonstrate the synthesis and characterization of Fe-intercalated ZrSe2 thin films on quartz substrates using the low-pressure chemical vapor deposition of the single-source precursor [Fe(η5-C5H4Se)2Zr(η5-C5H5)2]2. Powder X-ray diffraction of the film scraping and subsequent Rietveld refinement of the data showed the successful synthesis of the Fe0.14ZrSe2 phase, along with secondary phases of FeSe and ZrO2. Upon intercalation, a small optical band gap enhancement (Eg(direct)opt = 1.72 eV) is detected in comparison with that of the host material.enAttribution 4.0 Internationalhttp://creativecommons.org/licenses/by/4.0/Electrical conductivityIntercalated structureThin filmsChemical vapour depositionArticlehttps://doi.org/10.1021/acsomega.0c00413info:eu-repo/semantics/openAccess