Arredondo, BelénDios, Cristina deVergaz, RicardoRomero, BeatrizZimmermann, BirgerWurfel, Uli2014-02-032014-02-0320131566-1199http://hdl.handle.net/10115/12026We report on the fabrication of Indium Tin Oxide (ITO)-free inverted organic bulk heterojunction (BHJ) photodetectors of poly(3-hexylthiophene) (P3HT): 1-(3-methoxycarbonyl)propyl-1-1-phenyl-(6,6) C61 (PCBM). The final inverted device structure is Cr/Al/Cr/P3HT:PCBM/poly-3,4-ethylenedioxythiophene:poly-styrenesulfonate (PEDOT:PSS)/Ag (Zimmermann et al., 2009) [1]. The device is top-absorbing with the light entering through the hole contact grid. We have fabricated standard devices with structure ITO/PEDOT:PSS/P3HT:PCBM/LiF/Al in order to carry out a comparison study. Inverted photodetectors show slightly higher quantum efficiency and responsivity compared to standard devices. Frequency responses at different bias voltages were measured showing a maximum -3 dB cut-off frequency of 780 kHz and 700 kHz at -3 V for the standard and inverted structures respectively. Parameters extracted from the fit of a circuital model to the impedance spectroscopy measurements were used to estimate the photodiode cut-off frequency as function of bias. (C) 2013 Elsevier B.V. All rights reserved.engAtribución-NoComercial-SinDerivadas 3.0 Españahttp://creativecommons.org/licenses/by-nc-nd/3.0/es/ITO-free; Organic photodetector; Inverted structure; P3HT:PCBMinfo:eu-repo/semantics/article10.1016/j.orgel.2013.06.018info:eu-repo/semantics/openAccess3307 Tecnología Electrónica3307.09 Dispositivos Fotoeléctricos