Weisser, stephanLarkins, EricCzotscher, KonradBenz, WDaleiden, JEsquivias, IgnacioFleissner, JRalston, JohnRomero, BeatrizSah, RESchönferlder, AlexanderRosenzweig, Joseph2014-02-032014-02-0319961041-1135http://hdl.handle.net/10115/12034We demonstrate record direct modulation bandwidths from MBE-grown In0.5Ga0.65As-GaAs multiple-quantum-well lasers with undoped active regions and with the upper and lower cladding layers grown at different growth temperatures, Short-cavity ridge waveguide lasers achieve CW direct modulation bandwidths up to 40 GHz for 6 x 130 mu m(2) devices at a bias current of 155 mA, which is the damping limit for this structure, We further demonstrate large-signal digital modulation up to 20 Gb/s (limited by the measurement setup) and linewidth enhancement factors of 1.4 at the lasing wavelength at threshold of similar to 1.1 mu m for these devices.engAtribución-NoComercial-SinDerivadas 3.0 Españahttp://creativecommons.org/licenses/by-nc-nd/3.0/es/ALGAASinfo:eu-repo/semantics/article10.1109/68.491554info:eu-repo/semantics/openAccess3307 Tecnología Electrónica3306.02 Aplicaciones Eléctricas