Esquivias, IgnacioWeisser, StephanRomero, BeatrizRalston, John2014-02-032014-02-031996-101041-1135http://hdl.handle.net/10115/12035We present experimental results on the high-frequency electrical impedance of In0.35Ga0.65As-GaAs multiquantum-well lasers with varied p-doping levels in the active region, The analysis of the data, using a simple three rate equation model, provides information about the dynamical time constants (the carrier lifetime, the effective carrier capture and escape times) under the laser operation conditions, The addition of p-doping increases the carrier escape time at threshold from 0.7 ns, extracted for the undoped devices, up to a value higher than 2 ns for the p-doped lasers, The effective capture time is estimated to be between 2 and 5 ps.engAtribución-NoComercial-SinDerivadas 3.0 Españahttp://creativecommons.org/licenses/by-nc-nd/3.0/es/QUANTUM-WELL; NONLINEAR GAIN; MQW LASERSinfo:eu-repo/semantics/article10.1109/68.536632info:eu-repo/semantics/openAccess3307 Tecnología Electrónica3306.02 Aplicaciones Eléctricas