Examinando por Autor "Garcia, Ivan"

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Engineering of ultra-thin sintered porous silicon virtual substrates for lattice-mismatched growth compliance and epilayer detachability
(Elsevier, 2022) Sanchez-Perez, Clara; Hernandez-Castro, Mauricio; Garcia, Ivan
The air-sensitivity of mesoporous silicon layers etched on p-type wafers was evaluated comparing ambientoxidized to methyl-capped samples, from which the unaltered pore/interpore sizes were obtained and linked to diffraction patterns and reflectivity data. Sintering of oxide-free nano/mesoporous bilayers produced ultrathin porous epi-foils with full surface reconstruction at temperatures below 1000 ◦C. The epi-foils were inplane tensely strained and exhibited good crystallinity and polished wafer-like surface roughness (RMSmin = 0.23 nm), emerging as potential compliant substrates for crack-free epitaxy of flat heterostructures. Furthermore, they were conveniently formed over a weakly bonded macroporous mesh that provided both structural stability and ease for detachment, establishing sintering below 1000 ◦C as a promising route to avoid collapsing and premature delamination of ultra-thin films.
Fast chemical thinning of germanium wafers for optoelectronic applications
(Elsevier, 2022-03-30) Sanchez-Perez, Clara; Garcia, Ivan; Rey-Stolle, Ignacio
Chemical thinning of germanium wafers was carried out in H3PO4:HNO3:HF aqueous solutions, in which etch rates and surface morphology was adjusted through changes in etchant dilution and viscosity. Pitless and smooth surfaces (RMS = 0.42 nm) were obtained at industrially acceptable rates via a diffusion-controlled mechanism. Etchant-resistant wax enabled reversible bonding to a polypropylene substrate, emerging as a potential route for industrial production of thinned germanium optoelectronics.