Fast chemical thinning of germanium wafers for optoelectronic applications

Fecha

2022-03-30

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Editor

Elsevier

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Resumen

Chemical thinning of germanium wafers was carried out in H3PO4:HNO3:HF aqueous solutions, in which etch rates and surface morphology was adjusted through changes in etchant dilution and viscosity. Pitless and smooth surfaces (RMS = 0.42 nm) were obtained at industrially acceptable rates via a diffusion-controlled mechanism. Etchant-resistant wax enabled reversible bonding to a polypropylene substrate, emerging as a potential route for industrial production of thinned germanium optoelectronics.

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Citación

Clara Sanchez-Perez, Ivan Garcia, Ignacio Rey-Stolle, Fast chemical thinning of germanium wafers for optoelectronic applications, Applied Surface Science, Volume 579, 2022, 152199, ISSN 0169-4332, https://doi.org/10.1016/j.apsusc.2021.152199.
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