Fast chemical thinning of germanium wafers for optoelectronic applications

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dc.contributor.authorSanchez-Perez, Clara
dc.contributor.authorGarcia, Ivan
dc.contributor.authorRey-Stolle, Ignacio
dc.date.accessioned2025-01-29T08:58:45Z
dc.date.available2025-01-29T08:58:45Z
dc.date.issued2022-03-30
dc.description.abstractChemical thinning of germanium wafers was carried out in H3PO4:HNO3:HF aqueous solutions, in which etch rates and surface morphology was adjusted through changes in etchant dilution and viscosity. Pitless and smooth surfaces (RMS = 0.42 nm) were obtained at industrially acceptable rates via a diffusion-controlled mechanism. Etchant-resistant wax enabled reversible bonding to a polypropylene substrate, emerging as a potential route for industrial production of thinned germanium optoelectronics.
dc.identifier.citationClara Sanchez-Perez, Ivan Garcia, Ignacio Rey-Stolle, Fast chemical thinning of germanium wafers for optoelectronic applications, Applied Surface Science, Volume 579, 2022, 152199, ISSN 0169-4332, https://doi.org/10.1016/j.apsusc.2021.152199.
dc.identifier.doihttps://doi.org/10.1016/j.apsusc.2021.152199
dc.identifier.issn1873-5584 (online)
dc.identifier.issn0169-4332 (print)
dc.identifier.urihttps://hdl.handle.net/10115/67337
dc.language.isoen
dc.publisherElsevier
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 Internationalen
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/
dc.subjectWafer thinning
dc.subjectphotovoltaics
dc.subjectoptoelectronics
dc.subjectsolar cell processing
dc.titleFast chemical thinning of germanium wafers for optoelectronic applications
dc.typeArticle

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