Damping limited modulation bandwidths up to 40 GHz in undoped short-cavity InGaAs-GaAs multiple quantum well lasers
Weisser, stephan; Larkins, Eric; Czotscher, Konrad; Benz, W; Daleiden, J; Esquivias, Ignacio; Fleissner, J; Ralston, John; Romero, Beatriz; Sah, RE; Schönferlder, Alexander; Rosenzweig, Joseph
DOI:
10.1109/68.491554
Fecha:
1996
Resumen
We demonstrate record direct modulation bandwidths from MBE-grown In0.5Ga0.65As-GaAs multiple-quantum-well lasers with undoped active regions and with the upper and lower cladding layers grown at different growth temperatures, Short-cavity ridge waveguide lasers achieve CW direct modulation bandwidths up to 40 GHz for 6 x 130 mu m(2) devices at a bias current of 155 mA, which is the damping limit for this structure, We further demonstrate large-signal digital modulation up to 20 Gb/s (limited by the measurement setup) and linewidth enhancement factors of 1.4 at the lasing wavelength at threshold of similar to 1.1 mu m for these devices.
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