| dc.contributor.author | Weisser, Stephan | |
| dc.contributor.author | Esquivias, Ignacio | |
| dc.contributor.author | Tasker, PJ | |
| dc.contributor.author | Ralston, John | |
| dc.contributor.author | Romero, Beatriz | |
| dc.contributor.author | Rosenzweig, Joseph | |
| dc.date.accessioned | 2014-02-03T15:02:37Z | |
| dc.date.available | 2014-02-03T15:02:37Z | |
| dc.date.issued | 1994 | |
| dc.identifier.issn | 1041-1135 | |
| dc.identifier.uri | http://hdl.handle.net/10115/12036 | |
| dc.description.abstract | We derive theoretical expressions for the impedance of quantum-well lasers below and above threshold based on a simple rate equation model, These electrical laser characteristics are shown to be dominated by purely electrical parameters related to carrier capture/transport and carrier re-emission, The results of on-wafer measurements of the impedance of high-speed In0.35Ga0.65As/GaAs multipie-quantum-well lasers are shown to be in good agreement with this simple model, allowing us to extract the effective carrier escape time and the effective carrier lifetime, and to estimate the effective carrier capture/transport time, | es |
| dc.language.iso | eng | es |
| dc.publisher | IEEE | |
| dc.rights | Atribución-NoComercial-SinDerivadas 3.0 España | * |
| dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/es/ | * |
| dc.subject | NONLINEAR GAIN; CIRCUIT | es |
| dc.title | Impedance characteristics of quantum well lasers | es |
| dc.type | info:eu-repo/semantics/article | es |
| dc.identifier.doi | 10.1109/68.392224 | es |
| dc.rights.accessRights | info:eu-repo/semantics/openAccess | es |
| dc.subject.unesco | 3307 Tecnología Electrónica | es |
| dc.subject.unesco | 3306.02 Aplicaciones Eléctricas | es |
| dc.subject.unesco | 3307.07 Dispositivos láser | es |
| dc.description.departamento | Tecnología Electrónica | |
Except where otherwise noted, this item's license is described as Atribución-NoComercial-SinDerivadas 3.0 España