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Measurement of the C12A7:e- thermionic emission enhancement due to photon exposure

dc.contributor.authorToledo, Javier
dc.contributor.authorPost, Ángel
dc.contributor.authorPlaza, José Fabián
dc.date.accessioned2024-02-06T08:44:45Z
dc.date.available2024-02-06T08:44:45Z
dc.date.issued2023
dc.identifier.issn1742-6588
dc.identifier.urihttps://hdl.handle.net/10115/29729
dc.description.abstractIn this work, a test set-up device is designed, developed and manufactured to perform a direct measurement of the current emission enhancement that the photon absorption can bring to the thermionic emission in a Photon-Enhanced Thermionic Emission Device (PETED) where the C12A7:e- electride is used as the semiconductor due to its low work function value of 2.4 eV. Even though the measured thermionic emission starts at low operational temperatures, obtaining for example a current density emission of 5 mA/cm2 at 500 °C, there is barely an increase of 1% in the current emission when the device is exposed to a source of photons. This effect is mainly due to the presence of a dielectric layer at the material surface, which acts as a barrier, reduces the current enhancement effect from photon excitation, and drives to a limited efficiency of 27 μA/cm2/W.es
dc.language.isoenges
dc.publisherJournal of Physics: Conference Series - Institute of Physicses
dc.rightsAttribution 4.0 International
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.subjectElectric excitationes
dc.subjectPhotonses
dc.subjectCurrent emissionses
dc.subjectEmission enhancementes
dc.subjectelectridees
dc.titleMeasurement of the C12A7:e- thermionic emission enhancement due to photon exposurees
dc.typeinfo:eu-repo/semantics/conferenceObjectes
dc.identifier.doi10.1088/1742-6596/2526/1/012111es
dc.rights.accessRightsinfo:eu-repo/semantics/openAccesses


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Attribution 4.0 InternationalExcept where otherwise noted, this item's license is described as Attribution 4.0 International