Performance of ITO-free inverted organic bulk heterojunction photodetectors: Comparison with standard device architecture
| dc.contributor.author | Arredondo, Belén | |
| dc.contributor.author | Dios, Cristina de | |
| dc.contributor.author | Vergaz, Ricardo | |
| dc.contributor.author | Romero, Beatriz | |
| dc.contributor.author | Zimmermann, Birger | |
| dc.contributor.author | Wurfel, Uli | |
| dc.date.accessioned | 2014-02-03T12:59:31Z | |
| dc.date.available | 2014-02-03T12:59:31Z | |
| dc.date.issued | 2013 | |
| dc.description.abstract | We report on the fabrication of Indium Tin Oxide (ITO)-free inverted organic bulk heterojunction (BHJ) photodetectors of poly(3-hexylthiophene) (P3HT): 1-(3-methoxycarbonyl)propyl-1-1-phenyl-(6,6) C61 (PCBM). The final inverted device structure is Cr/Al/Cr/P3HT:PCBM/poly-3,4-ethylenedioxythiophene:poly-styrenesulfonate (PEDOT:PSS)/Ag (Zimmermann et al., 2009) [1]. The device is top-absorbing with the light entering through the hole contact grid. We have fabricated standard devices with structure ITO/PEDOT:PSS/P3HT:PCBM/LiF/Al in order to carry out a comparison study. Inverted photodetectors show slightly higher quantum efficiency and responsivity compared to standard devices. Frequency responses at different bias voltages were measured showing a maximum -3 dB cut-off frequency of 780 kHz and 700 kHz at -3 V for the standard and inverted structures respectively. Parameters extracted from the fit of a circuital model to the impedance spectroscopy measurements were used to estimate the photodiode cut-off frequency as function of bias. (C) 2013 Elsevier B.V. All rights reserved. | es |
| dc.description.departamento | Tecnología Electrónica | |
| dc.identifier.doi | 10.1016/j.orgel.2013.06.018 | es |
| dc.identifier.issn | 1566-1199 | |
| dc.identifier.uri | http://hdl.handle.net/10115/12026 | |
| dc.language.iso | eng | es |
| dc.publisher | Elsevier | es |
| dc.rights | Atribución-NoComercial-SinDerivadas 3.0 España | * |
| dc.rights.accessRights | info:eu-repo/semantics/openAccess | es |
| dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/es/ | * |
| dc.subject | ITO-free; Organic photodetector; Inverted structure; P3HT:PCBM | es |
| dc.subject.unesco | 3307 Tecnología Electrónica | es |
| dc.subject.unesco | 3307.09 Dispositivos Fotoeléctricos | es |
| dc.title | Performance of ITO-free inverted organic bulk heterojunction photodetectors: Comparison with standard device architecture | es |
| dc.type | info:eu-repo/semantics/article | es |