High-bandwidth organic photodetector analyzed by impedance spectroscopy

dc.contributor.authorArredondo, Belén
dc.contributor.authorDios, Cristina de
dc.contributor.authorVergaz, Ricardo
dc.contributor.authorPozo, Gonzalo del
dc.contributor.authorRomero, Beatriz
dc.date.accessioned2014-02-03T14:13:43Z
dc.date.available2014-02-03T14:13:43Z
dc.date.issued2012
dc.description.abstractAn organic bulk heterojunction photodetector (OPD) is fabricated on the basis of a blend of poly(3-hexyl thiophene):1-(3-methoxycarbonyl)-propyl-1-1-phenyl-(6,6) C61. The OPD responsivity is calculated from current density-voltage characteristic (J-V) under green-LED illumination obtaining 1 A/W. Frequency response at different biases is measured, which shows a high ¿3-dB cutoff frequency of 343 kHz at ¿3 V. Impedance measurements are carried out at different reverse biases, and the results are fitted with a small signal equivalent circuit. The device cutoff frequency (fc) can be estimated with the parameters extracted from this circuit obtaining good agreement between measured and calculated fc.es
dc.description.departamentoTecnología Electrónica
dc.identifier.doi10.1109/LPT.2012.2217488es
dc.identifier.urihttp://hdl.handle.net/10115/12032
dc.language.isoenges
dc.publisherIEEEes
dc.relationS2009/ESP-1781
dc.rightsAtribución-NoComercial-SinDerivadas 3.0 España*
dc.rights.accessRightsinfo:eu-repo/semantics/openAccesses
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/*
dc.subjectBulk heterojunction, cutoff frequency, impedance spectroscopy, organic photodetector.es
dc.subject.unesco3307 Tecnología Electrónicaes
dc.subject.unesco3306.02 Aplicaciones Eléctricases
dc.titleHigh-bandwidth organic photodetector analyzed by impedance spectroscopyes
dc.typeinfo:eu-repo/semantics/articlees

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