Carrier Capture and Escape Processes in In Ga As-GaAs Quantum-Well Lasers

Abstract

We have extracted the ratio between the carrier capture and escape times, eta, for In0.25Gao0.75As-GaAs lasers containing one, two, or three quantum wells, from high-frequency subthreshold impedance measurements at different temperatures. Our results show that the carrier capture process dominates over the diffusion along the confinement region in the overall transport/capture process. The obtained value for eta is comparable to unity, and this fact has to be taken into account to obtain real material parameters, such as the carrier lifetime and the radiative recombination coefficient.