Bursting and Excitability in Neuromorphic Resonant Tunneling Diodes

dc.contributor.authorOrtega-Piwonka, Ignacio
dc.contributor.authorPiro, Oreste
dc.contributor.authorFigueiredo, José
dc.contributor.authorRomeira, Bruno
dc.contributor.authorJavaloyes, Julien J. P.
dc.date.accessioned2024-01-08T15:06:37Z
dc.date.available2024-01-08T15:06:37Z
dc.date.issued2021-03-05
dc.descriptionThis work is supported in part by the European Commission through the H2020-FET-OPEN Project “ChipAI” under Grant Agreement 82884. We acknowledge fruitful discussions with A. Teruel, R. Prohens, and C. Vich regarding the dynamics of slow-fast systems.es
dc.description.abstractWe study in this paper the dynamics of quantum nanoelectronic resonant tunneling diodes (RTDs) as excitable neuromorphic spike generators. We disclose the mechanisms by which the RTD creates excitable all-or-nothing spikes and we identify a regime of bursting in which the RTD emits a random number of closely packed spikes. The control of the latter is paramount for applications in event-activated neuromorphic sensing and computing. Finally, we discuss a regime of multistability in which the RTD behaves as a memory. Our results can be extended to other devices exhibiting negative differential conductance.es
dc.identifier.citationI. Ortega-Piwonka, O. Piro, J. Figueiredo, B. Romeira, J. Javaloyes. Bursting and Excitability in Neuromorphic Resonant Tunneling Diodes. Physical Review Applied 15(3), 034017 (2021)es
dc.identifier.doi10.1103/PhysRevApplied.15.034017es
dc.identifier.issn2331-7019
dc.identifier.urihttps://hdl.handle.net/10115/28266
dc.language.isoenges
dc.publisherAmerican Physical Societyes
dc.rights.accessRightsinfo:eu-repo/semantics/openAccesses
dc.titleBursting and Excitability in Neuromorphic Resonant Tunneling Diodeses
dc.typeinfo:eu-repo/semantics/articlees

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