Simple model for calculating the ratio of the carrier capture and escape times in quantum-well lasers
DOI:
10.1063/1.126077
Date:
2000-03-20
Résumé
We have developed a simple model for the carrier capture and escape processes in quantum-well (QW) lasers, which yields an analytical expression for the ratio of the carrier capture and escape times. It predicts a decrease in the escape time with injected carrier density due to the state filling effect. It also shows an exponential dependence of the escape time on the effective barrier height and on the inverse of the temperature. A comparison between experimental and calculated values for InGaAs/GaAs QW lasers is presented showing a good agreement
Colecciones
- Artículos de Revista [3651]
Herramientas
https://eciencia.urjc.es/themes/Mirage2/lib/js/urjc.js
Estadísticas
Statistiques d'usage de visualisationCitas
Excepté là où spécifié autrement, la license de ce document est décrite en tant que Atribución-NoComercial-SinDerivadas 3.0 España